PartsCube Global

IXYSTO-220-3RoHS

IXTP3N50D2

MOSFET N-CH 500V 3A TO220AB

IXTP3N50D2 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3

Series

Depletion

Status

Active

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandIXYS
ModelIXTP3N50D2
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)1.5Ohm @ 1.5A, 0V
Gate Charge (Qg)40 nC @ 5 V
Input Capacitance (Ciss)1070 pF @ 25 V
Power Dissipation (Max)125W (Tc)
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusActive

Application & Notes

IXTP3N50D2 by IXYS is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5Ohm @ 1.5A, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET FeatureDepletion Mode
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.5A, 0V
Power Dissipation (Max)125W (Tc)
Gate Charge (Qg) (Max) @ Vgs40 nC @ 5 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds1070 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.