IXTD1R4N60P 11
MOSFET N-CH 600V 1.4A DIE
Transistors Fets Mosfets Single
Die
PolarHV™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTD1R4N60P 11 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 9Ohm @ 700mA, 10V |
| Vgs(th) (Max) | 5.5V @ 25µA |
| Gate Charge (Qg) | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) | 140 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXTD1R4N60P 11 by IXYS is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9Ohm @ 700mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXTD1R4N60P 11
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
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