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IXYS-RoHS

IXT-1-1N100S1

MOSFET N-CH 1000V 1.5A 8-SOIC

IXT-1-1N100S1 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

-

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXT-1-1N100S1
FET TypeN-Channel
Drain to Source Voltage (Vdss)1000 V
RoHSRoHS
Part StatusActive

Application & Notes

IXT-1-1N100S1 by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)

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