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IXYSSOT-227-4, miniBLOCRoHS

IXFN24N100

MOSFET N-CH 1KV 24A SOT-227B

IXFN24N100 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

SOT-227-4, miniBLOC

Series

HiPerFET™

Status

Not For New Designs

Price available on request

MOQ: 10 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXFN24N100
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1000 V
Rds On (Max)390mOhm @ 12A, 10V
Vgs(th) (Max)5.5V @ 8mA
Gate Charge (Qg)267 nC @ 10 V
Input Capacitance (Ciss)8700 pF @ 25 V
Power Dissipation (Max)568W (Tc)
Drive Voltage10V
Supplier Device PackageSOT-227B
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

IXFN24N100 by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 390mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 8mA
Rds On (Max) @ Id, Vgs390mOhm @ 12A, 10V
Power Dissipation (Max)568W (Tc)
Gate Charge (Qg) (Max) @ Vgs267 nC @ 10 V
Drain to Source Voltage (Vdss)1000 V
Input Capacitance (Ciss) (Max) @ Vds8700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)

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