PartsCube Global

IXYSTO-264-3, TO-264AARoHS

IXFK66N50Q2

MOSFET N-CH 500V 66A TO264AA

IXFK66N50Q2 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-264-3, TO-264AA

Series

HiPerFET™

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandIXYS
ModelIXFK66N50Q2
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)80mOhm @ 500mA, 10V
Vgs(th) (Max)4.5V @ 8mA
Gate Charge (Qg)200 nC @ 10 V
Input Capacitance (Ciss)8400 pF @ 25 V
Power Dissipation (Max)735W (Tc)
Drive Voltage10V
Supplier Device PackageTO-264AA (IXFK)
RoHSRoHS
Part StatusObsolete

Application & Notes

IXFK66N50Q2 by IXYS is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-264-3, TO-264AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 80mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 8mA
Rds On (Max) @ Id, Vgs80mOhm @ 500mA, 10V
Power Dissipation (Max)735W (Tc)
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C66A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.