IXFH46N65X3
DISCRETE MOSFET 46A 650V X3 TO24
Transistors Fets Mosfets Single
TO-247-3
HiPerFET™, Ultra X3
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFH46N65X3 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) | 40 nC @ 10 V |
| Input Capacitance (Ciss) | 2730 pF @ 25 V |
| Power Dissipation (Max) | 520W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247 (IXFH) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXFH46N65X3 by IXYS is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXFH46N65X3
Alternatives & Replacements
View All →SPW11N60C3FKSA1
MOSFET N-CH 650V 11A TO247-3
HUFA75344G3
MOSFET N-CH 55V 75A TO247-3
IPW50R140CPFKSA1
MOSFET N-CH 550V 23A TO247-3
IRFP048NPBF
HEXFET POWER MOSFET
FCH077N65F-F085
POWER FIELD-EFFECT TRANSISTOR, N
FCH072N60F
MOSFET N-CH 600V 52A TO247-3
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 520W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2730 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.