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IXYSTO-264-3, TO-264AARoHS

IXFB150N65X2

MOSFET N-CH 650V 150A PLUS264

IXFB150N65X2 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-264-3, TO-264AA

Series

HiPerFET™, Ultra X2

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXFB150N65X2
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)17mOhm @ 75A, 10V
Vgs(th) (Max)5.5V @ 8mA
Gate Charge (Qg)430 nC @ 10 V
Input Capacitance (Ciss)20400 pF @ 25 V
Power Dissipation (Max)1560W (Tc)
Drive Voltage10V
Supplier Device PackagePLUS264™
RoHSRoHS
Part StatusActive

Application & Notes

IXFB150N65X2 by IXYS is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-264-3, TO-264AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17mOhm @ 75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 8mA
Rds On (Max) @ Id, Vgs17mOhm @ 75A, 10V
Power Dissipation (Max)1560W (Tc)
Gate Charge (Qg) (Max) @ Vgs430 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds20400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C150A (Tc)

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