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Infineon Technologies8-PowerTDFNRoHS

ISC028N04NM5ATMA1

40V 2.8M OPTIMOS MOSFET SUPERSO8

ISC028N04NM5ATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN

Series

OptiMOS™-5

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelISC028N04NM5ATMA1
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)2.8mOhm @ 50A, 10V
Vgs(th) (Max)3.4V @ 30µA
Gate Charge (Qg)38 nC @ 10 V
Input Capacitance (Ciss)2700 pF @ 20 V
Power Dissipation (Max)3W (Ta), 75W (Tc)
Drive Voltage7V, 10V
Supplier Device PackagePG-TDSON-8 FL
RoHSRoHS
Part StatusActive

Application & Notes

ISC028N04NM5ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.8mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.4V @ 30µA
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
Power Dissipation (Max)3W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 121A (Tc)

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