IRLS4030TRL7PP
MOSFET N-CH 100V 190A D2PAK
Transistors Fets Mosfets Single
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
HEXFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRLS4030TRL7PP |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 3.9mOhm @ 110A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) | 11490 pF @ 50 V |
| Power Dissipation (Max) | 370W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | D2PAK (7-Lead) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRLS4030TRL7PP by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab), TO-263CB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.9mOhm @ 110A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRLS4030TRL7PP
Alternatives & Replacements
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AUTOMOTIVE HEXFET N CHANNEL
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IPBE65R099CFD7AATMA1
MOSFET N-CH 650V 24A TO263-7
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 110A, 10V |
| Power Dissipation (Max) | 370W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11490 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
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