PC
Infineon TechnologiesSOT-23-6RoHS

IRLMS6702TRPBF

MOSFET P-CH 20V 2.4A MICRO6

IRLMS6702TRPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6

Series

HEXFET®

Status

Active

$0.59 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandInfineon Technologies
ModelIRLMS6702TRPBF
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)200mOhm @ 1.6A, 4.5V
Vgs(th) (Max)700mV @ 250µA
Gate Charge (Qg)8.8 nC @ 4.5 V
Input Capacitance (Ciss)210 pF @ 15 V
Power Dissipation (Max)1.7W (Ta)
Drive Voltage2.7V, 4.5V
Supplier Device PackageMicro6™(TSOP-6)
RoHSRoHS
Part StatusActive

Application & Notes

IRLMS6702TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 1.6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700mV @ 250µA
Rds On (Max) @ Id, Vgs200mOhm @ 1.6A, 4.5V
Power Dissipation (Max)1.7W (Ta)
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.