IRLHS6376TR2PBF
MOSFET 2N-CH 30V 3.6A PQFN
Transistors Fets Mosfets Arrays
6-VDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRLHS6376TR2PBF |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 63mOhm @ 3.4A, 4.5V |
| Vgs(th) (Max) | 1.1V @ 10µA |
| Gate Charge (Qg) | 2.8nC @ 4.5V |
| Input Capacitance (Ciss) | 270pF @ 25V |
| Power Dissipation (Max) | 1.5W |
| Supplier Device Package | 6-PQFN (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRLHS6376TR2PBF by Infineon Technologies is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 63mOhm @ 3.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRLHS6376TR2PBF
Alternatives & Replacements
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TSM2537CQ RFG
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.5W |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
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