IRL6297SDTRPBF
IRL6297SD - 20V-100V N-CHANNEL S
Transistors Fets Mosfets Arrays
DirectFET™ Isometric SA
HEXFET®
Active
Price available on request
MOQ: 620 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRL6297SDTRPBF |
| Package / Case | DirectFET™ Isometric SA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 4.9mOhm @ 15A, 4.5V |
| Vgs(th) (Max) | 1.1V @ 35µA |
| Gate Charge (Qg) | 54nC @ 10V |
| Input Capacitance (Ciss) | 2245pF @ 10V |
| Power Dissipation (Max) | 1.7W |
| Supplier Device Package | DIRECTFET™ SA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRL6297SDTRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric SA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.9mOhm @ 15A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRL6297SDTRPBF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.7W |
| Vgs(th) (Max) @ Id | 1.1V @ 35µA |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 15A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2245pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
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