IRGS8B60KTRLPBF
IGBT 600V 28A 167W D2PAK
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
Price available on request
MOQ: 376 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRGS8B60KTRLPBF |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 167 W |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRGS8B60KTRLPBF by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRGS8B60KTRLPBF
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 29 nC |
| Power - Max | 167 W |
| Test Condition | 400V, 8A, 50Ohm, 15V |
| Switching Energy | 160µJ (on), 160µJ (off) |
| Td (on/off) @ 25°C | 23ns/140ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 8A |
| Current - Collector (Ic) (Max) | 28 A |
| Current - Collector Pulsed (Icm) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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