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NXP USA Inc.TO-220-3RoHS

IRFZ44N,127

MOSFET N-CH 55V 49A TO220AB

IRFZ44N,127 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelIRFZ44N,127
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)22mOhm @ 25A, 10V
Vgs(th) (Max)4V @ 1mA
Gate Charge (Qg)62 nC @ 10 V
Input Capacitance (Ciss)1800 pF @ 25 V
Power Dissipation (Max)110W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220AB
RoHSRoHS
Part StatusObsolete

Application & Notes

IRFZ44N,127 by NXP USA Inc. is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs22mOhm @ 25A, 10V
Power Dissipation (Max)110W (Tc)
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C49A (Tc)

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