IRFI4212H-117PXKMA1
MOSFET 2N-CH 100V 11A TO220-5
Transistors Fets Mosfets Arrays
TO-220-5 Full Pack, Formed Leads
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Price available on request
MOQ: 1000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFI4212H-117PXKMA1 |
| Package / Case | TO-220-5 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 72.5mOhm @ 6.6A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 18nC @ 10V |
| Input Capacitance (Ciss) | 490pF @ 50V |
| Power Dissipation (Max) | 18W (Tc) |
| Supplier Device Package | TO-220-5 Full-Pak |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFI4212H-117PXKMA1 by Infineon Technologies is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-5 Full Pack, Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 72.5mOhm @ 6.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFI4212H-117PXKMA1
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 18W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 72.5mOhm @ 6.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
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