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Infineon TechnologiesTO-220-5 Full Pack, Formed LeadsRoHS

IRFI4020H-117PXKMA1

MOSFET 2N-CH 200V 9.1A TO-220

Subcategory

Transistors Fets Mosfets Arrays

Package

TO-220-5 Full Pack, Formed Leads

Status

Active

Price available on request

MOQ: 1000 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRFI4020H-117PXKMA1
Package / CaseTO-220-5 Full Pack, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)200V
Rds On (Max)100mOhm @ 5.5A, 10V
Vgs(th) (Max)4.9V @ 100µA
Gate Charge (Qg)29nC @ 10V
Input Capacitance (Ciss)1.24nF @ 25V
Power Dissipation (Max)21W (Tc)
Supplier Device PackageTO-220-5 Full-Pak
RoHSRoHS
Part StatusActive

Application & Notes

IRFI4020H-117PXKMA1 by Infineon Technologies is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-5 Full Pack, Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 5.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max21W (Tc)
Vgs(th) (Max) @ Id4.9V @ 100µA
Rds On (Max) @ Id, Vgs100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Drain to Source Voltage (Vdss)200V
Input Capacitance (Ciss) (Max) @ Vds1.24nF @ 25V
Current - Continuous Drain (Id) @ 25°C9.1A (Tc)

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