IRFI4019HG-117P
MOSFET 2N-CH 150V 8.7A TO-220FP
Transistors Fets Mosfets Arrays
TO-220-5 Full Pack (Formed Leads)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFI4019HG-117P |
| Package / Case | TO-220-5 Full Pack (Formed Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 150V |
| Rds On (Max) | 95mOhm @ 5.2A, 10V |
| Vgs(th) (Max) | 4.9V @ 50µA |
| Gate Charge (Qg) | 20nC @ 10V |
| Input Capacitance (Ciss) | 810pF @ 25V |
| Power Dissipation (Max) | 18W |
| Supplier Device Package | TO-220-5 Full-Pak |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRFI4019HG-117P by Infineon Technologies is an N-channel power MOSFET rated at 150V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-5 Full Pack (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 95mOhm @ 5.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFI4019HG-117P
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 18W |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A |
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