IRFHM8363TR2PBF
MOSFET 2N-CH 30V 11A 8PQFN
Transistors Fets Mosfets Arrays
8-PowerVDFN
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFHM8363TR2PBF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 14.9mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.35V @ 25µA |
| Gate Charge (Qg) | 15nC @ 10V |
| Input Capacitance (Ciss) | 1165pF @ 10V |
| Power Dissipation (Max) | 2.7W |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRFHM8363TR2PBF by Infineon Technologies is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14.9mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFHM8363TR2PBF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2.7W |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
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