IRFHM792TRPBF
MOSFET 2N-CH 100V 2.3A 8PQFN
Transistors Fets Mosfets Arrays
8-PowerVDFN
HEXFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFHM792TRPBF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 195mOhm @ 2.9A, 10V |
| Vgs(th) (Max) | 4V @ 10µA |
| Gate Charge (Qg) | 6.3nC @ 10V |
| Input Capacitance (Ciss) | 251pF @ 25V |
| Power Dissipation (Max) | 2.3W |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFHM792TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 195mOhm @ 2.9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFHM792TRPBF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 2.3W |
| Vgs(th) (Max) @ Id | 4V @ 10µA |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
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