IRFHE4250DTRPBF
HEXFET POWER MOSFET
Transistors Fets Mosfets Arrays
32-PowerVFQFN
HEXFET®
Active
Price available on request
MOQ: 168 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRFHE4250DTRPBF |
| Package / Case | 32-PowerVFQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
| Vgs(th) (Max) | 2.1V @ 35µA, 2.1V @ 100µA |
| Gate Charge (Qg) | 20nC @ 4.5V, 53nC @ 4.5V |
| Input Capacitance (Ciss) | 1735pF @ 13V, 4765pF @ 13V |
| Power Dissipation (Max) | 156W (Tc) |
| Supplier Device Package | 32-PQFN (6x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFHE4250DTRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 32-PowerVFQFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFHE4250DTRPBF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA, 2.1V @ 100µA |
| Rds On (Max) @ Id, Vgs | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V, 53nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735pF @ 13V, 4765pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc), 303A (Tc) |
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