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Infineon Technologies8-PowerVDFNRoHS

IRFH5025TRPBF

MOSFET N-CH 250V 3.8A 8PQFN

IRFH5025TRPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Series

HEXFET®

Status

Active

$3.28 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRFH5025TRPBF
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)100mOhm @ 5.7A, 10V
Vgs(th) (Max)5V @ 150µA
Gate Charge (Qg)56 nC @ 10 V
Input Capacitance (Ciss)2150 pF @ 50 V
Power Dissipation (Max)3.6W (Ta), 8.3W (Tc)
Drive Voltage10V
Supplier Device Package8-PQFN (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

IRFH5025TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 5.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 150µA
Rds On (Max) @ Id, Vgs100mOhm @ 5.7A, 10V
Power Dissipation (Max)3.6W (Ta), 8.3W (Tc)
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)

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