IRFH4251DTRPBF
MOSFET 2N-CH 25V 64A/188A PQFN
Transistors Fets Mosfets Arrays
8-PowerVDFN
FASTIRFET™
Not For New Designs
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFH4251DTRPBF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual), Schottky |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 3.2mOhm @ 30A, 10V |
| Vgs(th) (Max) | 2.1V @ 35µA |
| Gate Charge (Qg) | 15nC @ 4.5V |
| Input Capacitance (Ciss) | 1314pF @ 13V |
| Power Dissipation (Max) | 31W, 63W |
| Supplier Device Package | PG-TISON-8 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
IRFH4251DTRPBF by Infineon Technologies is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.2mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFH4251DTRPBF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Logic Level Gate |
| Power - Max | 31W, 63W |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1314pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 64A, 188A |
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