IRF7910PBF
MOSFET 2N-CH 12V 10A 8-SOIC
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
HEXFET®
Discontinued at Digi-Key
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRF7910PBF |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 15mOhm @ 8A, 4.5V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 26nC @ 4.5V |
| Input Capacitance (Ciss) | 1730pF @ 6V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | 8-SO |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
IRF7910PBF by Infineon Technologies is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF7910PBF
Alternatives & Replacements
View All →FDSS2407
POWER FIELD-EFFECT TRANSISTOR, 3
NDS9953A
P-CHANNEL POWER MOSFET
FDS6900S
N-CHANNEL POWER MOSFET
NTMD4840NR2G
MOSFET 2N-CH 30V 4.5A 8SOIC
DMP3085LSD-13
MOSFET 2P-CH 30V 3.9A 8SO
FW216A-TL-2W
MOSFET 2N-CH 35V 4.5A 8SOIC
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.