PC
Rochester Electronics, LLC8-TSSOP, 8-MSOP (0.118", 3.00mm Width)RoHS

IRF7607TRPBF

IRF7607 - 12V-300V N-CHANNEL POW

IRF7607TRPBF by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Series

HEXFET®

Status

Active

$0.20 / unit (market reference)

MOQ: 1508 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIRF7607TRPBF
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)30mOhm @ 6.5A, 4.5V
Vgs(th) (Max)1.2V @ 250µA
Gate Charge (Qg)22 nC @ 5 V
Input Capacitance (Ciss)1310 pF @ 15 V
Power Dissipation (Max)1.8W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device PackageMicro8™
RoHSRoHS
Part StatusActive

Application & Notes

IRF7607TRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 6.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA
Rds On (Max) @ Id, Vgs30mOhm @ 6.5A, 4.5V
Power Dissipation (Max)1.8W (Ta)
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1310 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)

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