IRF7341GTRPBF
MOSFET N-CH 55V 5.1A
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
HEXFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRF7341GTRPBF |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) | 50mOhm @ 5.1A, 10V |
| Vgs(th) (Max) | 1V @ 250µA (Min) |
| Gate Charge (Qg) | 44nC @ 10V |
| Input Capacitance (Ciss) | 780pF @ 25V |
| Power Dissipation (Max) | 2.4W |
| Supplier Device Package | 8-SO |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRF7341GTRPBF by Infineon Technologies is an N-channel power MOSFET rated at 55V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 5.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF7341GTRPBF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 2.4W |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
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