IRF6723M2DTR1P
MOSFET 2N-CH 30V 15A DIRECTFET
Transistors Fets Mosfets Arrays
DirectFET™ Isometric MA
HEXFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRF6723M2DTR1P |
| Package / Case | DirectFET™ Isometric MA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 6.6mOhm @ 15A, 10V |
| Vgs(th) (Max) | 2.35V @ 25µA |
| Gate Charge (Qg) | 14nC @ 4.5V |
| Input Capacitance (Ciss) | 1380pF @ 15V |
| Power Dissipation (Max) | 2.7W |
| Supplier Device Package | DIRECTFET™ MA |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRF6723M2DTR1P by Infineon Technologies is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric MA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.6mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF6723M2DTR1P
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2.7W |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
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