IRF6621TRPBF
30V SINGLE N-CHANNEL HEXFET
Transistors Fets Mosfets Single
DirectFET™ Isometric SQ
HEXFET®
Active
$0.44 / unit (market reference)
MOQ: 682 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRF6621TRPBF |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 9.1mOhm @ 12A, 10V |
| Vgs(th) (Max) | 2.25V @ 250µA |
| Gate Charge (Qg) | 17.5 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1460 pF @ 15 V |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DIRECTFET™ SQ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRF6621TRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric SQ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.1mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF6621TRPBF
Alternatives & Replacements
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IRF6811STRPBF-INF
DIRECTFET PLUS POWER MOSFET
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IRF6711STRPBF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 12A, 10V |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 55A (Tc) |
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