IRF5810
MOSFET 2P-CH 20V 2.9A 6TSOP
Transistors Fets Mosfets Arrays
SOT-23-6 Thin, TSOT-23-6
HEXFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRF5810 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 90mOhm @ 2.9A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 9.6nC @ 4.5V |
| Input Capacitance (Ciss) | 650pF @ 16V |
| Power Dissipation (Max) | 960mW |
| Supplier Device Package | 6-TSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRF5810 by Infineon Technologies is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 2.9A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF5810
Alternatives & Replacements
View All →CPH6635-TL-H
MOSFET N/P-CH 30V/20V CPH6
FDC6322C
SMALL SIGNAL P-CHANNEL MOSFET
FDC6320C
SMALL SIGNAL FIELD-EFFECT TRANSI
FDC6302P
SMALL SIGNAL FIELD-EFFECT TRANSI
FDC6432SH
SMALL SIGNAL P-CHANNEL MOSFET
FDC6308P
P-CHANNEL MOSFET
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 960mW |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
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