Infineon TechnologiesDieRoHS
IRD3CH101DB6
DIODE GEN PURP 1.2KV 200A DIE
Category
Subcategory
Diodes Rectifiers Single
Package
Die
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRD3CH101DB6 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRD3CH101DB6 by Infineon Technologies is a commonly used electronic component in the Diodes Rectifiers Single category. Available in Die package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
📖 Technical Guides for IRD3CH101DB6
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All Technical Specifications
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Reverse Recovery Time (trr) | 360 ns |
| Current - Reverse Leakage @ Vr | 3.6 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 200A |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 200 A |
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