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Infineon TechnologiesTO-247-3RoHS

IPW65R048CFDAFKSA1

MOSFET N-CH 650V 63.3A TO247-3

IPW65R048CFDAFKSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

Automotive, AEC-Q101, CoolMOS™

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPW65R048CFDAFKSA1
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)48mOhm @ 29.4A, 10V
Vgs(th) (Max)4.5V @ 2.9mA
Gate Charge (Qg)270 nC @ 10 V
Input Capacitance (Ciss)7440 pF @ 100 V
Power Dissipation (Max)500W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO247-3
RoHSRoHS
Part StatusActive

Application & Notes

IPW65R048CFDAFKSA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 48mOhm @ 29.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 2.9mA
Rds On (Max) @ Id, Vgs48mOhm @ 29.4A, 10V
Power Dissipation (Max)500W (Tc)
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds7440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C63.3A (Tc)

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