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Infineon TechnologiesTO-251-3 Short Leads, IPak, TO-251AARoHS

IPU60R600C6BKMA1

MOSFET N-CH 600V 7.3A TO251-3

IPU60R600C6BKMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Series

CoolMOS™

Status

Discontinued at Digi-Key

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPU60R600C6BKMA1
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)600mOhm @ 2.4A, 10V
Vgs(th) (Max)3.5V @ 200µA
Gate Charge (Qg)20.5 nC @ 10 V
Input Capacitance (Ciss)440 pF @ 100 V
Power Dissipation (Max)63W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO251-3
RoHSRoHS
Part StatusDiscontinued at Digi-Key

Application & Notes

IPU60R600C6BKMA1 by Infineon Technologies is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 600mOhm @ 2.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 200µA
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Power Dissipation (Max)63W (Tc)
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)

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