PC
Rochester Electronics, LLCTO-251-3 Short Leads, IPak, TO-251AARoHS

IPS65R650CEAKMA1

MOSFET N-CH 700V 10.1A TO251-3

IPS65R650CEAKMA1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Status

Last Time Buy

$0.37 / unit (market reference)

MOQ: 818 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIPS65R650CEAKMA1
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)700 V
Rds On (Max)650mOhm @ 2.1A, 10V
Vgs(th) (Max)3.5V @ 210µA
Gate Charge (Qg)23 nC @ 10 V
Input Capacitance (Ciss)440 pF @ 100 V
Power Dissipation (Max)86W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO251-3
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

IPS65R650CEAKMA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 650mOhm @ 2.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 210µA
Rds On (Max) @ Id, Vgs650mOhm @ 2.1A, 10V
Power Dissipation (Max)86W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Drain to Source Voltage (Vdss)700 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10.1A (Tc)

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