IPS60R1K0PFD7SAKMA1
MOSFET N-CH 650V 4.7A TO251-3
Transistors Fets Mosfets Single
TO-251-3 Short Leads, IPak, TO-251AA
CoolMOS™PFD7
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPS60R1K0PFD7SAKMA1 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 1Ohm @ 1A, 10V |
| Vgs(th) (Max) | 4.5V @ 50µA |
| Gate Charge (Qg) | 6 nC @ 10 V |
| Input Capacitance (Ciss) | 230 pF @ 400 V |
| Power Dissipation (Max) | 26W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-TO251-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPS60R1K0PFD7SAKMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPS60R1K0PFD7SAKMA1
Alternatives & Replacements
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MOSFET N-CH 24V 80A IPAK
FDU8796
MOSFET N-CH 25V 35A IPAK
IPU50R1K4CEAKMA1
MOSFET N-CH 500V 3.1A TO251-3
NDD02N60Z-1G
MOSFET N-CH 600V 2.2A IPAK
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1A, 10V |
| Power Dissipation (Max) | 26W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
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