PC
Infineon TechnologiesTO-263-7, D²Pak (6 Leads + Tab)RoHS

IPB039N10N3GATMA1

MOSFET N-CH 100V 160A TO263-7

IPB039N10N3GATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

OptiMOS™

Status

Active

$3.36 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPB039N10N3GATMA1
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)3.9mOhm @ 100A, 10V
Vgs(th) (Max)3.5V @ 160µA
Gate Charge (Qg)117 nC @ 10 V
Input Capacitance (Ciss)8410 pF @ 50 V
Power Dissipation (Max)214W (Tc)
Drive Voltage6V, 10V
Supplier Device PackagePG-TO263-7
RoHSRoHS
Part StatusActive

Application & Notes

IPB039N10N3GATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.9mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 160µA
Rds On (Max) @ Id, Vgs3.9mOhm @ 100A, 10V
Power Dissipation (Max)214W (Tc)
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds8410 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C160A (Tc)

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