PC
Rochester Electronics, LLCTO-220-3 Full PackRoHS

IPA60R600CPXKSA1

IPA60R600 - 600V COOLMOS N-CHANN

Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack

Series

CoolMOS™

Status

Active

$0.61 / unit (market reference)

MOQ: 489 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIPA60R600CPXKSA1
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)600mOhm @ 3.3A, 10V
Vgs(th) (Max)3.5V @ 220µA
Gate Charge (Qg)27 nC @ 10 V
Input Capacitance (Ciss)550 pF @ 100 V
Power Dissipation (Max)28W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO220-3-31
RoHSRoHS
Part StatusActive

Application & Notes

IPA60R600CPXKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 600mOhm @ 3.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 220µA
Rds On (Max) @ Id, Vgs600mOhm @ 3.3A, 10V
Power Dissipation (Max)28W (Tc)
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6.1A (Tc)

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