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Infineon TechnologiesTO-220-3 Full PackRoHS

IPA105N15N3GXKSA1

MOSFET N-CH 150V 37A TO220-FP

IPA105N15N3GXKSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack

Series

OptiMOS™

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPA105N15N3GXKSA1
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Rds On (Max)10.5mOhm @ 37A, 10V
Vgs(th) (Max)4V @ 160µA
Gate Charge (Qg)55 nC @ 10 V
Input Capacitance (Ciss)4300 pF @ 75 V
Power Dissipation (Max)40.5W (Tc)
Drive Voltage8V, 10V
Supplier Device PackagePG-TO220-FP
RoHSRoHS
Part StatusActive

Application & Notes

IPA105N15N3GXKSA1 by Infineon Technologies is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.5mOhm @ 37A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 160µA
Rds On (Max) @ Id, Vgs10.5mOhm @ 37A, 10V
Power Dissipation (Max)40.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C37A (Tc)

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