Infineon TechnologiesTO-247-4Yes
IMW65R048M1H
MOSFET SIC N-CH 650V 48A TO247-4
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IMW65R048M1H |
| Package / Case | TO-247-4 |
| FET Type | N-Channel |
| Rds On (Max) | 48mOhm @ 24A, 18V |
| RoHS | Yes |
| Part Status | Active |
Application & Notes
IMW65R048M1H by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 48mOhm @ 24A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMW65R048M1H
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All Technical Specifications
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide) |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain | 48A |
| Rds On (Max) | 48mOhm @ 24A, 18V |
| Operating Temperature | -55°C ~ 175°C |
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