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Infineon TechnologiesTO-247-3RoHS

IMW120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-3

IMW120R220M1HXKSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

CoolSiC™

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIMW120R220M1HXKSA1
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Rds On (Max)286mOhm @ 4A, 18V
Vgs(th) (Max)5.7V @ 1.6mA
Gate Charge (Qg)8.5 nC @ 18 V
Input Capacitance (Ciss)289 pF @ 800 V
Power Dissipation (Max)75W (Tc)
Drive Voltage15V, 18V
Supplier Device PackagePG-TO247-3-41
RoHSRoHS
Part StatusActive

Application & Notes

IMW120R220M1HXKSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 286mOhm @ 4A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)+23V, -7V
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id5.7V @ 1.6mA
Rds On (Max) @ Id, Vgs286mOhm @ 4A, 18V
Power Dissipation (Max)75W (Tc)
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 18 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds289 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Current - Continuous Drain (Id) @ 25°C13A (Tc)

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