IKY50N120CH3XKSA1
IGBT 1200V 100A TO247-4
Transistors Igbts Single
TO-247-4
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKY50N120CH3XKSA1 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 652 W |
| Supplier Device Package | PG-TO247-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IKY50N120CH3XKSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKY50N120CH3XKSA1
Alternatives & Replacements
View All →NGTB25N120FL2WAG
IGBT FIELD STOP 1.2KV TO247-4
NGTB40N120FL2WAG
IGBT FIELD STOP 1200V 160A TO247
IGZ100N65H5XKSA1
IGBT TRENCH 650V 161A TO247-4
IKZ75N65EL5XKSA1
IGBT 650V 100A TO247-4
NGTB50N65FL2WAG
IGBT FIELD STOP 650V 160A TO247
IKZ75N65NH5XKSA1
IGBT TRENCH 650V 90A TO247-4
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 235 nC |
| Power - Max | 652 W |
| Test Condition | 600V, 50A, 10Ohm, 15V |
| Switching Energy | 2.3mJ (on), 1.9mJ (off) |
| Td (on/off) @ 25°C | 32ns/296ns |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 50A |
| Reverse Recovery Time (trr) | 255 ns |
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.