IKW30N65ET7XKSA1
IKW30N65ET7XKSA1
Transistors Igbts Single
TO-247-3
Automotive, AEC-Q101, TrenchStop™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKW30N65ET7XKSA1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 188 W |
| Supplier Device Package | PG-TO247-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IKW30N65ET7XKSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKW30N65ET7XKSA1
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 180 nC |
| Power - Max | 188 W |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Switching Energy | 590µJ (on), 500µJ (off) |
| Td (on/off) @ 25°C | 20ns/245ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 30A |
| Reverse Recovery Time (trr) | 80 ns |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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