IKD15N60RC2ATMA1
IKD15N60RC2ATMA1
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TrenchStop™
Active
$1.66 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKD15N60RC2ATMA1 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 115.4 W |
| Supplier Device Package | PG-TO252-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IKD15N60RC2ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKD15N60RC2ATMA1
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 72 nC |
| Power - Max | 115.4 W |
| Test Condition | 400V, 15A, 49Ohm, 15V |
| Switching Energy | 570µJ (on), 350µJ (off) |
| Td (on/off) @ 25°C | 18ns/374ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 15A |
| Reverse Recovery Time (trr) | 129 ns |
| Current - Collector (Ic) (Max) | 28 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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