IKD15N60R
IGBT TRENCH 600V 30A TO252-3
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TrenchStop®
Obsolete
$0.78 / unit (market reference)
MOQ: 384 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKD15N60R |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 250 W |
| Supplier Device Package | PG-TO252-3-11 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IKD15N60R by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKD15N60R
Alternatives & Replacements
View All →NGTB10N60R2DT4G
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SGR15N40LTF
IGBT, 400V, N-CHANNEL, TO-252
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NGD8205NT4G
IGBT 390V 20A 125W DPAK
All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 90 nC |
| Power - Max | 250 W |
| Test Condition | 400V, 15A, 15Ohm, 15V |
| Switching Energy | 900µJ |
| Td (on/off) @ 25°C | 16ns/183ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Reverse Recovery Time (trr) | 110 ns |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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