IKB30N65EH5ATMA1
IGBT TRENCH/FS 650V 55A D2PAK
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TrenchStop™ 5
Active
$1.64 / unit (market reference)
MOQ: 183 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKB30N65EH5ATMA1 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 188 W |
| Supplier Device Package | PG-TO263-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IKB30N65EH5ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKB30N65EH5ATMA1
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 70 nC |
| Power - Max | 188 W |
| Test Condition | 400V, 30A, 22Ohm, 15V |
| Switching Energy | 870µJ (on), 300µJ (off) |
| Td (on/off) @ 25°C | 24ns/159ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Collector (Ic) (Max) | 55 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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