IHW25N120E1XKSA1
IGBT NPT/TRENCH 1200V 50A TO247
Transistors Igbts Single
TO-247-3
TrenchStop™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IHW25N120E1XKSA1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 231 W |
| Supplier Device Package | PG-TO247-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IHW25N120E1XKSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IHW25N120E1XKSA1
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All Technical Specifications
| IGBT Type | NPT and Trench |
| Input Type | Standard |
| Gate Charge | 147 nC |
| Power - Max | 231 W |
| Switching Energy | 800µJ (off) |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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