IGN1011L70
GAN, RF POWER TRANSISTOR, L-BAND
Transistors Fets Mosfets Rf
PL32A2
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Integra Technologies Inc. |
| Model | IGN1011L70 |
| Package / Case | PL32A2 |
| Supplier Device Package | PL32A2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IGN1011L70 by Integra Technologies Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PL32A2 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IGN1011L70
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All Technical Specifications
| Gain | 22dB |
| Frequency | 1.03GHz ~ 1.09GHz |
| Current - Test | 22 mA |
| Power - Output | 80W |
| Voltage - Test | 50 V |
| Transistor Type | GaN HEMT |
| Voltage - Rated | 120 V |
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