IGB50N65S5ATMA1
IGBT TRENCH/FS 650V 80A TO263-3
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TrenchStop™ 5
Active
$3.38 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IGB50N65S5ATMA1 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 270 W |
| Supplier Device Package | PG-TO263-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IGB50N65S5ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IGB50N65S5ATMA1
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 120 nC |
| Power - Max | 270 W |
| Test Condition | 400V, 50A, 8.2Ohm, 15V |
| Switching Energy | 1.23mJ (on), 740µJ (off) |
| Td (on/off) @ 25°C | 20ns/139ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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