IGB10N60TATMA1
IGBT 600V 20A 110W TO263-3
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TrenchStop®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IGB10N60TATMA1 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 110 W |
| Supplier Device Package | PG-TO263-3-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IGB10N60TATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IGB10N60TATMA1
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All Technical Specifications
| IGBT Type | NPT, Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 62 nC |
| Power - Max | 110 W |
| Test Condition | 400V, 10A, 23Ohm, 15V |
| Switching Energy | 430µJ |
| Td (on/off) @ 25°C | 12ns/215ns |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 10A |
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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