IAUA250N04S6N006AUMA1
MOSFET_(20V 40V) PG-HSOF-5
Transistors Fets Mosfets Single
5-PowerSFN
OptiMOS™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IAUA250N04S6N006AUMA1 |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 640µOhm @ 100A, 10V |
| Vgs(th) (Max) | 3V @ 145µA |
| Gate Charge (Qg) | 169 nC @ 10 V |
| Input Capacitance (Ciss) | 11064 pF @ 25 V |
| Power Dissipation (Max) | 250W (Tc) |
| Drive Voltage | 7V, 10V |
| Supplier Device Package | PG-HSOF-5-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IAUA250N04S6N006AUMA1 by Infineon Technologies is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 5-PowerSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 640µOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IAUA250N04S6N006AUMA1
Alternatives & Replacements
View All →IAUA250N04S6N007AUMA1
MOSFET_(20V 40V) PG-HSOF-5
IST006N04NM6AUMA1
MOSFET N-CH 40V 58A/475A HSOF-5
IST007N04NM6AUMA1
MOSFET N-CH 40V 54A/440A HSOF-5
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 145µA |
| Rds On (Max) @ Id, Vgs | 640µOhm @ 100A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11064 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 450A (Tj) |
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