HN4B01JE(TE85L,F)
TRANS NPN/PNP 50V 0.15A ESV PLN
Transistors Bipolar Bjt Arrays
SOT-553
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | HN4B01JE(TE85L,F) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | ESV |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HN4B01JE(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-553 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HN4B01JE(TE85L,F)
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All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | NPN, PNP (Emitter Coupled) |
| Frequency - Transition | 80MHz |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10MA, 100MA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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