HN3C51F-GR(TE85L,F
TRANS 2NPN 120V 0.1A SM6
Transistors Bipolar Bjt Arrays
SC-74, SOT-457
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | HN3C51F-GR(TE85L,F |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 300mW |
| Supplier Device Package | SM6 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HN3C51F-GR(TE85L,F by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-74, SOT-457 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HN3C51F-GR(TE85L,F
Alternatives & Replacements
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All Technical Specifications
| Power - Max | 300mW |
| Transistor Type | 2 NPN (Dual) |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
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